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|a 10.1002/adma.202314274
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|a pubmed24n1474.xml
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|a (NLM)38647521
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|a DE-627
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|a eng
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|a Kim, Yeon Ho
|e verfasserin
|4 aut
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|a Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 18.07.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.
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|a A gate stack that facilitates a high-quality interface and tight electrostatic control is crucial for realizing high-performance and low-power field-effect transistors (FETs). However, when constructing conventional metal-oxide-semiconductor structures with two-dimensional (2D) transition metal dichalcogenide channels, achieving these requirements becomes challenging due to inherent difficulties in obtaining high-quality gate dielectrics through native oxidation or film deposition. Here, a gate-dielectric-less device architecture of van der Waals Schottky gated metal-semiconductor FETs (vdW-SG MESFETs) using a molybdenum disulfide (MoS2) channel and surface-oxidized metal gates such as nickel and copper is reported. Benefiting from the strong SG coupling, these MESFETs operate at remarkably low gate voltages, <0.5 V. Notably, they also exhibit Boltzmann-limited switching behavior featured by a subthreshold swing of ≈60 mV dec-1 and negligible hysteresis. These ideal FET characteristics are attributed to the formation of a Fermi-level (EF) pinning-free gate stack at the Schottky-Mott limit. Furthermore, authors experimentally and theoretically confirm that EF depinning can be achieved by suppressing both metal-induced and disorder-induced gap states at the interface between the monolithic-oxide-gapped metal gate and the MoS2 channel. This work paves a new route for designing high-performance and energy-efficient 2D electronics
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|a Journal Article
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|a 2D semiconductors
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|a Fermi‐level pinning
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|a MoS2
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|a low‐power electronics
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|a metal–semiconductor field‐effect transistors
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|a Jiang, Wei
|e verfasserin
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|a Lee, Donghun
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|a Moon, Donghoon
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|a Choi, Hyun-Young
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|a Shin, June-Chul
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|a Jeong, Yeonsu
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|a Kim, Jong Chan
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|a Lee, Jaeho
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|a Huh, Woong
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|a Han, Chang Yong
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|a So, Jae-Pil
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|a Kim, Tae Soo
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|a Kim, Seong Been
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|a Koo, Hyun Cheol
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|a Wang, Gunuk
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|a Kang, Kibum
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|a Park, Hong-Gyu
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|a Jeong, Hu Young
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|a Im, Seongil
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|a Lee, Gwan-Hyoung
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|a Low, Tony
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|a Lee, Chul-Ho
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 29 vom: 04. Juli, Seite e2314274
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:29
|g day:04
|g month:07
|g pages:e2314274
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|u http://dx.doi.org/10.1002/adma.202314274
|3 Volltext
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