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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201803690
|2 doi
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|a pubmed24n0973.xml
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|a (DE-627)NLM292187378
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|a (NLM)30589465
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Li, Mengjiao
|e verfasserin
|4 aut
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|a High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 03.01.2019
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Tunability and stability in the electrical properties of 2D semiconductors pave the way for their practical applications in logic devices. A robust layered indium selenide (InSe) field-effect transistor (FET) with superior controlled stability is demonstrated by depositing an indium (In) doping layer. The optimized InSe FETs deliver an unprecedented high electron mobility up to 3700 cm2 V-1 s-1 at room temperature, which can be retained with 60% after 1 month. Further insight into the evolution of the position of the Fermi level and the microscopic device structure with different In thicknesses demonstrates an enhanced electron-doping behavior at the In/InSe interface. Furthermore, the contact resistance is also improved through the In insertion between InSe and Au electrodes, which coincides with the analysis of the low-frequency noise. The carrier fluctuation is attributed to the dominance of the phonon scattering events, which agrees with the observation of the temperature-dependent mobility. Finally, the flexible functionalities of the logic-circuit applications, for instance, inverter and not-and (NAND)/not-or (NOR) gates, are determined with these surface-doping InSe FETs, which establish a paradigm for 2D-based materials to overcome the bottleneck in the development of electronic devices
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|a Journal Article
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|a 2D electronics
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|a InSe transistors
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|a logic circuits
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|a low‐frequency noise
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|a surface charge transfer doping
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|a Lin, Che-Yi
|e verfasserin
|4 aut
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|a Yang, Shih-Hsien
|e verfasserin
|4 aut
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|a Chang, Yuan-Ming
|e verfasserin
|4 aut
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|a Chang, Jen-Kuei
|e verfasserin
|4 aut
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|a Yang, Feng-Shou
|e verfasserin
|4 aut
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|a Zhong, Chaorong
|e verfasserin
|4 aut
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| 700 |
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|a Jian, Wen-Bin
|e verfasserin
|4 aut
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| 700 |
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|a Lien, Chen-Hsin
|e verfasserin
|4 aut
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| 700 |
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|a Ho, Ching-Hwa
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Heng-Jui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Rong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Wenwu
|e verfasserin
|4 aut
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| 700 |
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|a Lin, Yen-Fu
|e verfasserin
|4 aut
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| 700 |
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|a Chu, Junhao
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 44 vom: 27. Nov., Seite e1803690
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:44
|g day:27
|g month:11
|g pages:e1803690
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|u http://dx.doi.org/10.1002/adma.201803690
|3 Volltext
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