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231224s2013 xx ||||| 00| ||eng c |
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|a (DE-627)NLM230969763
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|a (NLM)24046495
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Ulyanenkova, Tatjana
|e verfasserin
|4 aut
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|a Characterization of SiGe thin films using a laboratory X-ray instrument
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Band
|b nc
|2 rdacarrier
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|a Date Revised 21.10.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2-6 nm layers. For another set of partially relaxed layers, 50-200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation
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|a Journal Article
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|a high-resolution reciprocal space mapping
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|a misfit dislocation
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|a partly relaxed epitaxial films
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|a thin films
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|a Myronov, Maksym
|e verfasserin
|4 aut
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|a Benediktovitch, Andrei
|e verfasserin
|4 aut
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|a Mikhalychev, Alexander
|e verfasserin
|4 aut
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|a Halpin, John
|e verfasserin
|4 aut
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|a Ulyanenkov, Alex
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Journal of applied crystallography
|d 1998
|g 46(2013), Pt 4 vom: 01. Aug., Seite 898-902
|w (DE-627)NLM098121561
|x 0021-8898
|7 nnns
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|g volume:46
|g year:2013
|g number:Pt 4
|g day:01
|g month:08
|g pages:898-902
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|a AR
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|d 46
|j 2013
|e Pt 4
|b 01
|c 08
|h 898-902
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