Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

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Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 10 vom: 13. März, Seite 1504-9
Auteur principal: Pattanasattayavong, Pichaya (Auteur)
Autres auteurs: Yaacobi-Gross, Nir, Zhao, Kui, Ndjawa, Guy Olivier Ngongang, Li, Jinhua, Yan, Feng, O'Regan, Brian C, Amassian, Aram, Anthopoulos, Thomas D
Format: Article en ligne
Langue:English
Publié: 2013
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't Thiocyanates Copper 789U1901C5 cuprous thiocyanate PW2155WE9H
Accès en ligne Volltext