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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201202758
|2 doi
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|a pubmed24n0746.xml
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|a (DE-627)NLM223832103
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|a (NLM)23280854
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Pattanasattayavong, Pichaya
|e verfasserin
|4 aut
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|a Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 03.09.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm(2) V(-1) s(-1) . By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Thiocyanates
|2 NLM
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|a Copper
|2 NLM
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|a 789U1901C5
|2 NLM
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|a cuprous thiocyanate
|2 NLM
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|a PW2155WE9H
|2 NLM
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|a Yaacobi-Gross, Nir
|e verfasserin
|4 aut
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|a Zhao, Kui
|e verfasserin
|4 aut
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|a Ndjawa, Guy Olivier Ngongang
|e verfasserin
|4 aut
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|a Li, Jinhua
|e verfasserin
|4 aut
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|a Yan, Feng
|e verfasserin
|4 aut
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|a O'Regan, Brian C
|e verfasserin
|4 aut
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|a Amassian, Aram
|e verfasserin
|4 aut
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| 700 |
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|a Anthopoulos, Thomas D
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 10 vom: 13. März, Seite 1504-9
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:25
|g year:2013
|g number:10
|g day:13
|g month:03
|g pages:1504-9
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|u http://dx.doi.org/10.1002/adma.201202758
|3 Volltext
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