Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 10 vom: 13. März, Seite 1504-9
1. Verfasser: Pattanasattayavong, Pichaya (VerfasserIn)
Weitere Verfasser: Yaacobi-Gross, Nir, Zhao, Kui, Ndjawa, Guy Olivier Ngongang, Li, Jinhua, Yan, Feng, O'Regan, Brian C, Amassian, Aram, Anthopoulos, Thomas D
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Thiocyanates Copper 789U1901C5 cuprous thiocyanate PW2155WE9H
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm(2) V(-1) s(-1) . By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated
Beschreibung:Date Completed 03.09.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201202758