Pattanasattayavong, P., Yaacobi-Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., . . . Anthopoulos, T. D. (2013). Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature. Advanced materials (Deerfield Beach, Fla.), 25(10), 1504. https://doi.org/10.1002/adma.201202758
Style de citation ChicagoPattanasattayavong, Pichaya, Nir Yaacobi-Gross, Kui Zhao, Guy Olivier Ngongang Ndjawa, Jinhua Li, Feng Yan, Brian C. O'Regan, Aram Amassian, et Thomas D. Anthopoulos. "Hole-transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature." Advanced Materials (Deerfield Beach, Fla.) 25, no. 10 (2013): 1504. https://dx.doi.org/10.1002/adma.201202758.
Style de citation MLAPattanasattayavong, Pichaya, et al. "Hole-transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature." Advanced Materials (Deerfield Beach, Fla.), vol. 25, no. 10, 2013, p. 1504.