Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

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Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 10 vom: 13. März, Seite 1504-9
1. Verfasser: Pattanasattayavong, Pichaya (VerfasserIn)
Weitere Verfasser: Yaacobi-Gross, Nir, Zhao, Kui, Ndjawa, Guy Olivier Ngongang, Li, Jinhua, Yan, Feng, O'Regan, Brian C, Amassian, Aram, Anthopoulos, Thomas D
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Thiocyanates Copper 789U1901C5 cuprous thiocyanate PW2155WE9H
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