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20250206115537.0 |
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231223s2005 xx ||||| 00| ||eng c |
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|a pubmed25n0520.xml
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|a (DE-627)NLM156077272
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|a (NLM)15968128
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Takeda, Y
|e verfasserin
|4 aut
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|a Lowest limit for detection of impurity concentration in semiconductors by fluorescence XAFS
|b resonant Raman scattering and angle dependence
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|c 2005
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|b nc
|2 rdacarrier
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|a Date Completed 23.08.2005
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|a Date Revised 10.12.2019
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a The lowest limit for detection (LLD) of the impurity concentration doped in semiconductors in the case of fluorescence XAFS measurements has been investigated as a function of the matrix of the impurity and the geometry of the measurement. When the impurity concentration is very low and other background noise is well suppressed, X-ray resonant Raman scattering by the constituent atoms of the matrix remains as a major background for the fluorescence-detected XAFS measurement. For example, in the fluorescence-detected XAFS measurement for Er-doped semiconductors at the Er L(III)-edge, the LLD of the Er concentration was about 5 x 10(14) to 1 x 10(15) cm(-2) for GaAs and GaP, and lower than 1 x 10(14) cm(-2) for InP. The resonant Raman scattering of Ga atoms in the host semiconductor determines the LLD
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|a Evaluation Study
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Erbium
|2 NLM
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|a 77B218D3YE
|2 NLM
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|a Ofuchi, H
|e verfasserin
|4 aut
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|a Kyouzu, H
|e verfasserin
|4 aut
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|a Takahashi, R
|e verfasserin
|4 aut
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|a Tabuchi, M
|e verfasserin
|4 aut
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|i Enthalten in
|t Journal of synchrotron radiation
|d 1998
|g 12(2005), Pt 4 vom: 21. Juli, Seite 494-8
|w (DE-627)NLM09824129X
|x 0909-0495
|7 nnns
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|g volume:12
|g year:2005
|g number:Pt 4
|g day:21
|g month:07
|g pages:494-8
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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|a GBV_NLM
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| 912 |
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|a GBV_ILN_40
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|a GBV_ILN_350
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|a GBV_ILN_2005
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|a AR
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|d 12
|j 2005
|e Pt 4
|b 21
|c 07
|h 494-8
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