Lowest limit for detection of impurity concentration in semiconductors by fluorescence XAFS : resonant Raman scattering and angle dependence
The lowest limit for detection (LLD) of the impurity concentration doped in semiconductors in the case of fluorescence XAFS measurements has been investigated as a function of the matrix of the impurity and the geometry of the measurement. When the impurity concentration is very low and other backgr...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1998. - 12(2005), Pt 4 vom: 21. Juli, Seite 494-8 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2005
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Evaluation Study Journal Article Research Support, Non-U.S. Gov't Erbium 77B218D3YE |