Lowest limit for detection of impurity concentration in semiconductors by fluorescence XAFS : resonant Raman scattering and angle dependence
The lowest limit for detection (LLD) of the impurity concentration doped in semiconductors in the case of fluorescence XAFS measurements has been investigated as a function of the matrix of the impurity and the geometry of the measurement. When the impurity concentration is very low and other backgr...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1998. - 12(2005), Pt 4 vom: 21. Juli, Seite 494-8 |
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| Weitere Verfasser: | , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2005
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Evaluation Study Journal Article Research Support, Non-U.S. Gov't Erbium 77B218D3YE |
| Zusammenfassung: | The lowest limit for detection (LLD) of the impurity concentration doped in semiconductors in the case of fluorescence XAFS measurements has been investigated as a function of the matrix of the impurity and the geometry of the measurement. When the impurity concentration is very low and other background noise is well suppressed, X-ray resonant Raman scattering by the constituent atoms of the matrix remains as a major background for the fluorescence-detected XAFS measurement. For example, in the fluorescence-detected XAFS measurement for Er-doped semiconductors at the Er L(III)-edge, the LLD of the Er concentration was about 5 x 10(14) to 1 x 10(15) cm(-2) for GaAs and GaP, and lower than 1 x 10(14) cm(-2) for InP. The resonant Raman scattering of Ga atoms in the host semiconductor determines the LLD |
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| Beschreibung: | Date Completed 23.08.2005 Date Revised 10.12.2019 published: Print-Electronic Citation Status MEDLINE |
| ISSN: | 0909-0495 |