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|a 10.1002/adma.202302979
|2 doi
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|a pubmed24n1195.xml
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|a eng
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|a Tsai, Jing-Yuan
|e verfasserin
|4 aut
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|a A High-Entropy-Oxides-Based Memristor
|b Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 20.10.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a The application of high-entropy oxide (HEO) has attracted significant attention in recent years owing to their unique structural characteristics, such as excellent electrochemical properties and long-term cycling stability. However, the application of resistive random-access memory (RRAM) has not been extensively studied, and the switching mechanism of HEO-based RRAM has yet to be thoroughly investigated. In this study, HEO (Cr, Mn, Fe, Co, Ni)3 O4 with a spinel structure is epitaxially grown on a Nb:STO conductive substrate, and Pt metal is deposited as the top electrode. After the resistive-switching operation, some regions of the spinel structure are transformed into a rock-salt structure and analyzed using advanced transmission electron microscopy and scanning transmission electron microscopy. From the results of X-ray photoelectron spectroscopy and electron energy loss spectroscopy, only specific elements would change their valence state, which results in excellent resistive-switching properties with a high on/off ratio on the order of 105 , outstanding endurance (>4550 cycles), long retention time (>104 s), and high stability, which suggests that HEO is a promising RRAM material
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|a Journal Article
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|a atomic-scale evolution
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|a high-entropy oxide
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|a resistive random-access memory
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|a resistive switching
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|a structural transformation
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|a Chen, Jui-Yuan
|e verfasserin
|4 aut
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| 700 |
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|a Huang, Chun-Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lo, Hung-Yang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ke, Wei-En
|e verfasserin
|4 aut
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| 700 |
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|a Chu, Ying-Hao
|e verfasserin
|4 aut
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| 700 |
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|a Wu, Wen-Wei
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 41 vom: 13. Okt., Seite e2302979
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:35
|g year:2023
|g number:41
|g day:13
|g month:10
|g pages:e2302979
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|u http://dx.doi.org/10.1002/adma.202302979
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