A High-Entropy-Oxides-Based Memristor Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution

A High-Entropy-Oxides-Based Memristor : Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution

© 2023 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 41 vom: 13. Okt., Seite e2302979
1. Verfasser: Tsai, Jing-Yuan (VerfasserIn)
Weitere Verfasser: Chen, Jui-Yuan, Huang, Chun-Wei, Lo, Hung-Yang, Ke, Wei-En, Chu, Ying-Hao, Wu, Wen-Wei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article atomic-scale evolution high-entropy oxide resistive random-access memory resistive switching structural transformation
Beschreibung
Zusammenfassung:© 2023 Wiley-VCH GmbH.
The application of high-entropy oxide (HEO) has attracted significant attention in recent years owing to their unique structural characteristics, such as excellent electrochemical properties and long-term cycling stability. However, the application of resistive random-access memory (RRAM) has not been extensively studied, and the switching mechanism of HEO-based RRAM has yet to be thoroughly investigated. In this study, HEO (Cr, Mn, Fe, Co, Ni)3 O4 with a spinel structure is epitaxially grown on a Nb:STO conductive substrate, and Pt metal is deposited as the top electrode. After the resistive-switching operation, some regions of the spinel structure are transformed into a rock-salt structure and analyzed using advanced transmission electron microscopy and scanning transmission electron microscopy. From the results of X-ray photoelectron spectroscopy and electron energy loss spectroscopy, only specific elements would change their valence state, which results in excellent resistive-switching properties with a high on/off ratio on the order of 105 , outstanding endurance (>4550 cycles), long retention time (>104 s), and high stability, which suggests that HEO is a promising RRAM material
Beschreibung:Date Revised 20.10.2023
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202302979