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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202210755
|2 doi
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|a pubmed24n1174.xml
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|a (DE-627)NLM352297212
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|a (NLM)36719342
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Li, Bailing
|e verfasserin
|4 aut
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| 245 |
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|a Thickness-Dependent Topological Hall Effect in 2D Cr5 Si3 Nanosheets with Noncollinear Magnetic Phase
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 20.04.2023
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|a Date Revised 20.04.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Antiferromagnets with noncollinear spin order are expected to exhibit unconventional electromagnetic response, such as spin Hall effects, chiral abnormal, quantum Hall effect, and topological Hall effect. Here, 2D thickness-controlled and high-quality Cr5 Si3 nanosheets that are compatible with the complementary metal-oxide-semiconductor technology are synthesized by chemical vapor deposition method. The angular dependence of electromagnetic transport properties of Cr5 Si3 nanosheets is investigated using a physical property measurement system, and an obvious topological Hall effect (THE) appears at a large tilted magnetic field, which results from the noncollinear magnetic structure of the Cr5 Si3 nanosheet. The Cr5 Si3 nanosheets exhibit distinct thickness-dependent perpendicular magnetic anisotropy (PMA), and the THE only emerges in the specific thickness range with moderate PMA. This work provides opportunities for exploring fundamental spin-related physical mechanisms of noncollinear antiferromagnet in ultrathin limit
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|a Journal Article
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|a 2D nonlayered materials
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|a complementary metal-oxide-semiconductor
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|a noncollinear antiferromagnets
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|a perpendicular magnetic anisotropy
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|a topological Hall effect
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|a Zhang, Hongmei
|e verfasserin
|4 aut
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1 |
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|a Tao, Quanyang
|e verfasserin
|4 aut
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1 |
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|a Shen, Xiaohua
|e verfasserin
|4 aut
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1 |
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|a Huang, Ziwei
|e verfasserin
|4 aut
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1 |
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|a He, Kun
|e verfasserin
|4 aut
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|a Yi, Chen
|e verfasserin
|4 aut
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1 |
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|a Li, Xu
|e verfasserin
|4 aut
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1 |
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|a Zhang, Liqiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Zucheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Jialing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tang, Jingmei
|e verfasserin
|4 aut
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|a Zhou, Yucheng
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|4 aut
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|a Wang, Di
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|4 aut
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|a Yang, Xiangdong
|e verfasserin
|4 aut
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|a Zhao, Bei
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|4 aut
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| 700 |
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|a Wu, Ruixia
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|4 aut
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| 700 |
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|a Li, Jia
|e verfasserin
|4 aut
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| 700 |
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|a Li, Bo
|e verfasserin
|4 aut
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| 700 |
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|a Duan, Xidong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 16 vom: 01. Apr., Seite e2210755
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:35
|g year:2023
|g number:16
|g day:01
|g month:04
|g pages:e2210755
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|u http://dx.doi.org/10.1002/adma.202210755
|3 Volltext
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|d 35
|j 2023
|e 16
|b 01
|c 04
|h e2210755
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