Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing
Among other new device concepts, nickel silicide (NiSix)-based Schottky barrier nanowire transistors are projected to supplement down-scaling of the complementary metal-oxide semiconductor (CMOS) technology as its physical limits are reached. Control over the NiSix phase and its intrusions into the...
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Détails bibliographiques
| Publié dans: | Langmuir : the ACS journal of surfaces and colloids. - 1985. - 37(2021), 49 vom: 14. Dez., Seite 14284-14291
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| Auteur principal: |
Khan, Muhammad Bilal
(Auteur) |
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| Autres auteurs: |
Prucnal, Slawomir,
Ghosh, Sayantan,
Deb, Dipjyoti,
Hübner, René,
Pohl, Darius,
Rebohle, Lars,
Mikolajick, Thomas,
Erbe, Artur,
Georgiev, Yordan M |
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| Format: | Article en ligne
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| Langue: | English |
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| Publié: |
2021
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| Accès à la collection: | Langmuir : the ACS journal of surfaces and colloids
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| Sujets: | Journal Article |
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