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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.1c01862
|2 doi
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|a (NLM)34860534
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
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|a Khan, Muhammad Bilal
|e verfasserin
|4 aut
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| 245 |
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|a Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 14.12.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Among other new device concepts, nickel silicide (NiSix)-based Schottky barrier nanowire transistors are projected to supplement down-scaling of the complementary metal-oxide semiconductor (CMOS) technology as its physical limits are reached. Control over the NiSix phase and its intrusions into the nanowire is essential for superior performance and down-scaling of these devices. Several works have shown control over the phase, but control over the intrusion lengths has remained a challenge. To overcome this, we report a novel millisecond-range flash lamp annealing (FLA)-based silicidation process. Nanowires are fabricated on silicon-on-insulator substrates using a top-down approach. Subsequently, Ni silicidation experiments are carried out using FLA. It is demonstrated that this silicidation process gives unprecedented control over the silicide intrusions. Scanning electron microscopy and high-resolution transmission electron microscopy are performed for structural characterization of the silicide. FLA temperatures are estimated with the help of simulations
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|a Journal Article
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|a Prucnal, Slawomir
|e verfasserin
|4 aut
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| 700 |
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|a Ghosh, Sayantan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Deb, Dipjyoti
|e verfasserin
|4 aut
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| 700 |
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|a Hübner, René
|e verfasserin
|4 aut
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| 700 |
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|a Pohl, Darius
|e verfasserin
|4 aut
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| 700 |
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|a Rebohle, Lars
|e verfasserin
|4 aut
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|a Mikolajick, Thomas
|e verfasserin
|4 aut
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1 |
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|a Erbe, Artur
|e verfasserin
|4 aut
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| 700 |
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|a Georgiev, Yordan M
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1999
|g 37(2021), 49 vom: 14. Dez., Seite 14284-14291
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
1 |
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|g volume:37
|g year:2021
|g number:49
|g day:14
|g month:12
|g pages:14284-14291
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|u http://dx.doi.org/10.1021/acs.langmuir.1c01862
|3 Volltext
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