Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing

Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing

Among other new device concepts, nickel silicide (NiSix)-based Schottky barrier nanowire transistors are projected to supplement down-scaling of the complementary metal-oxide semiconductor (CMOS) technology as its physical limits are reached. Control over the NiSix phase and its intrusions into the...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1999. - 37(2021), 49 vom: 14. Dez., Seite 14284-14291
1. Verfasser: Khan, Muhammad Bilal (VerfasserIn)
Weitere Verfasser: Prucnal, Slawomir, Ghosh, Sayantan, Deb, Dipjyoti, Hübner, René, Pohl, Darius, Rebohle, Lars, Mikolajick, Thomas, Erbe, Artur, Georgiev, Yordan M
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:Among other new device concepts, nickel silicide (NiSix)-based Schottky barrier nanowire transistors are projected to supplement down-scaling of the complementary metal-oxide semiconductor (CMOS) technology as its physical limits are reached. Control over the NiSix phase and its intrusions into the nanowire is essential for superior performance and down-scaling of these devices. Several works have shown control over the phase, but control over the intrusion lengths has remained a challenge. To overcome this, we report a novel millisecond-range flash lamp annealing (FLA)-based silicidation process. Nanowires are fabricated on silicon-on-insulator substrates using a top-down approach. Subsequently, Ni silicidation experiments are carried out using FLA. It is demonstrated that this silicidation process gives unprecedented control over the silicide intrusions. Scanning electron microscopy and high-resolution transmission electron microscopy are performed for structural characterization of the silicide. FLA temperatures are estimated with the help of simulations
Beschreibung:Date Revised 14.12.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1520-5827
DOI:10.1021/acs.langmuir.1c01862