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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202106321
|2 doi
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|a pubmed24n1110.xml
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|a (DE-627)NLM333168305
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|a (NLM)34779068
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|a DE-627
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|a eng
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|a Xiong, Xiong
|e verfasserin
|4 aut
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|a Nonvolatile Logic and Ternary Content-Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 01.12.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Hardware realization of in-memory computing for efficient data-intensive computation is regarded as a promising paradigm beyond the Moore era. However, to realize such functions, the device structure using traditional Si complementary metal-oxide-semiconductor (CMOS) technology is complex with a large footprint. 2D material-based heterostructures have a unique advantage to build versatile logic functions based on novel heterostructures with simplified device footprint and low power. Here, by adopting the charge-trapping mechanism between a black phosphorus (BP) channel and a phosphorus oxide (POx ) layer, a nonvolatile CMOS logic circuit based on 2D BP and rhenium disulfide (ReS2 ) with a high voltage gain of ≈275 is realized with a persistent hysteresis window. A Schmidt-like flip-flop using only two transistors is also demonstrated, with far fewer transistor numbers than the conventional silicon counterpart, which usually requires six transistors. Furthermore, four-transistor (4T) nonvolatile ternary content-addressable memory (nvTCAM) cells are demonstrated with far fewer transistors for parallel data search. The nvTCAM cells exhibit high resistance ratios (Rratio ) up to ≈103 between match and mismatch states with zero standby power thanks to the nonvolatility of the BP transistors. This back-end-of-line compatible nvTCAM shows advantages over other structures with reduced complexity and thermal budget
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|a Journal Article
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|a Schmidt-like flip-flop
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|a black phosphorus
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|a nonvolatile logic
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4 |
|a rhenium disulfide
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| 650 |
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|a ternary content-addressable memory
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| 700 |
1 |
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|a Kang, Jiyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Shiyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tong, Anyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fu, Tianyue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Xuefei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Ru
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Yanqing
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 48 vom: 14. Dez., Seite e2106321
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:48
|g day:14
|g month:12
|g pages:e2106321
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|u http://dx.doi.org/10.1002/adma.202106321
|3 Volltext
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|d 34
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