Local atomic structure analysis of GaN surfaces via X-ray absorption spectroscopy by detecting Auger electrons with low energies

GaN is a promising material for power semiconductor devices used in next-generation vehicles. Its electrical properties such as carrier mobility and threshold voltage are affected by the interface between the oxide and the semiconductor, and identifying the interface states is important to improve t...

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Publié dans:	Journal of synchrotron radiation. - 1994. - 26(2019), Pt 6 vom: 01. Nov., Seite 1951-1955
Auteur principal:	Isomura, Noritake (Auteur)
Autres auteurs:	Kikuta, Daigo, Takahashi, Naoko, Kosaka, Satoru, Kataoka, Keita
Format:	Article en ligne
Langue:	English
Publié:	2019
Accès à la collection:	Journal of synchrotron radiation
Sujets:	Journal Article Auger electron yields K-shell absorption extended X-ray absorption fine structure gallium nitride surface sensitivity