Local atomic structure analysis of GaN surfaces via X-ray absorption spectroscopy by detecting Auger electrons with low energies
GaN is a promising material for power semiconductor devices used in next-generation vehicles. Its electrical properties such as carrier mobility and threshold voltage are affected by the interface between the oxide and the semiconductor, and identifying the interface states is important to improve t...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 26(2019), Pt 6 vom: 01. Nov., Seite 1951-1955 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2019
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article Auger electron yields K-shell absorption extended X-ray absorption fine structure gallium nitride surface sensitivity |
| Zusammenfassung: | GaN is a promising material for power semiconductor devices used in next-generation vehicles. Its electrical properties such as carrier mobility and threshold voltage are affected by the interface between the oxide and the semiconductor, and identifying the interface states is important to improve these properties. A surface-sensitive measurement of Ga K-edge extended X-ray absorption fine structure (EXAFS) by detecting Ga LMM Auger electrons that originate from Ga K-shell absorption is proposed for GaN. LMM Auger electrons with low energies were detected and the EXAFS oscillation was confirmed, providing information on the Ga atoms at the surface. Investigation of thermally oxidized GaN with an oxide film of defined thickness showed that the analysis depth was less than 10 nm, which is consistent with the inelastic mean free path of 2.3 nm estimated for LMM Auger electrons in GaN |
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| Beschreibung: | Date Completed 18.11.2019 Date Revised 18.11.2019 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1600-5775 |
| DOI: | 10.1107/S1600577519012827 |