Local atomic structure analysis of GaN surfaces via X-ray absorption spectroscopy by detecting Auger electrons with low energies
GaN is a promising material for power semiconductor devices used in next-generation vehicles. Its electrical properties such as carrier mobility and threshold voltage are affected by the interface between the oxide and the semiconductor, and identifying the interface states is important to improve t...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 26(2019), Pt 6 vom: 01. Nov., Seite 1951-1955
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| 1. Verfasser: |
Isomura, Noritake
(VerfasserIn) |
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| Weitere Verfasser: |
Kikuta, Daigo,
Takahashi, Naoko,
Kosaka, Satoru,
Kataoka, Keita |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2019
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation
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| Schlagworte: | Journal Article
Auger electron yields
K-shell absorption
extended X-ray absorption fine structure
gallium nitride
surface sensitivity |
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