Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using...
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Bibliographische Detailangaben
| Veröffentlicht in: | Chemistry of materials : a publication of the American Chemical Society. - 1998. - 30(2018), 3 vom: 13. Feb., Seite 663-670
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| 1. Verfasser: |
Singh, Joseph A
(VerfasserIn) |
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| Weitere Verfasser: |
Thissen, Nick F W,
Kim, Woo-Hee,
Johnson, Hannah,
Kessels, Wilhelmus M M,
Bol, Ageeth A,
Bent, Stacey F,
Mackus, Adriaan J M |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2018
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| Zugriff auf das übergeordnete Werk: | Chemistry of materials : a publication of the American Chemical Society
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| Schlagworte: | Journal Article |
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