Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 30(2018), 13 vom: 11. März, Seite e1706995
1. Verfasser: Chang, Yuan-Ming (VerfasserIn)
Weitere Verfasser: Yang, Shih-Hsien, Lin, Che-Yi, Chen, Chang-Hung, Lien, Chen-Hsin, Jian, Wen-Bin, Ueno, Keiji, Suen, Yuen-Wuu, Tsukagoshi, Kazuhito, Lin, Yen-Fu
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D electronics MoTe2 doping logic circuits transition metal dichalcogenide
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520 |a Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance 
650 4 |a Journal Article 
650 4 |a 2D electronics 
650 4 |a MoTe2 
650 4 |a doping 
650 4 |a logic circuits 
650 4 |a transition metal dichalcogenide 
700 1 |a Yang, Shih-Hsien  |e verfasserin  |4 aut 
700 1 |a Lin, Che-Yi  |e verfasserin  |4 aut 
700 1 |a Chen, Chang-Hung  |e verfasserin  |4 aut 
700 1 |a Lien, Chen-Hsin  |e verfasserin  |4 aut 
700 1 |a Jian, Wen-Bin  |e verfasserin  |4 aut 
700 1 |a Ueno, Keiji  |e verfasserin  |4 aut 
700 1 |a Suen, Yuen-Wuu  |e verfasserin  |4 aut 
700 1 |a Tsukagoshi, Kazuhito  |e verfasserin  |4 aut 
700 1 |a Lin, Yen-Fu  |e verfasserin  |4 aut 
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