High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 37 vom: 08. Okt., Seite 8302-8308
1. Verfasser: Wang, Jingli (VerfasserIn)
Weitere Verfasser: Yao, Qian, Huang, Chun-Wei, Zou, Xuming, Liao, Lei, Chen, Shanshan, Fan, Zhiyong, Zhang, Kai, Wu, Wei, Xiao, Xiangheng, Jiang, Changzhong, Wu, Wen-Wei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article MoS2 contact resistance hexagonal boron nitride tunneling
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520 |a High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2 . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance 
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700 1 |a Huang, Chun-Wei  |e verfasserin  |4 aut 
700 1 |a Zou, Xuming  |e verfasserin  |4 aut 
700 1 |a Liao, Lei  |e verfasserin  |4 aut 
700 1 |a Chen, Shanshan  |e verfasserin  |4 aut 
700 1 |a Fan, Zhiyong  |e verfasserin  |4 aut 
700 1 |a Zhang, Kai  |e verfasserin  |4 aut 
700 1 |a Wu, Wei  |e verfasserin  |4 aut 
700 1 |a Xiao, Xiangheng  |e verfasserin  |4 aut 
700 1 |a Jiang, Changzhong  |e verfasserin  |4 aut 
700 1 |a Wu, Wen-Wei  |e verfasserin  |4 aut 
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