High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 37 vom: 03. Okt., Seite 8302-8308
Auteur principal: Wang, Jingli (Auteur)
Autres auteurs: Yao, Qian, Huang, Chun-Wei, Zou, Xuming, Liao, Lei, Chen, Shanshan, Fan, Zhiyong, Zhang, Kai, Wu, Wei, Xiao, Xiangheng, Jiang, Changzhong, Wu, Wen-Wei
Format: Article en ligne
Langue:English
Publié: 2016
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article MoS2 contact resistance hexagonal boron nitride tunneling
Description
Résumé:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2 . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance
Description:Date Completed 17.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201602757