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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201505205
|2 doi
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|a pubmed24n0854.xml
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|a DE-627
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|a eng
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|a Zou, Xuming
|e verfasserin
|4 aut
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|a Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 06.07.2016
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-κ HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance
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|a Journal Article
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|a 2D materials
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|a boron nitride
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|a dielectric engineering
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|a heterostructures
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|a transistors
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|a Huang, Chun-Wei
|e verfasserin
|4 aut
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|a Wang, Lifeng
|e verfasserin
|4 aut
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|a Yin, Long-Jing
|e verfasserin
|4 aut
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|a Li, Wenqing
|e verfasserin
|4 aut
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|a Wang, Jingli
|e verfasserin
|4 aut
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|a Wu, Bin
|e verfasserin
|4 aut
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|a Liu, Yunqi
|e verfasserin
|4 aut
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|a Yao, Qian
|e verfasserin
|4 aut
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|a Jiang, Changzhong
|e verfasserin
|4 aut
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|a Wu, Wen-Wei
|e verfasserin
|4 aut
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|a He, Lin
|e verfasserin
|4 aut
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|a Chen, Shanshan
|e verfasserin
|4 aut
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|a Ho, Johnny C
|e verfasserin
|4 aut
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|a Liao, Lei
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 10 vom: 09. März, Seite 2062-9
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:28
|g year:2016
|g number:10
|g day:09
|g month:03
|g pages:2062-9
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|u http://dx.doi.org/10.1002/adma.201505205
|3 Volltext
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