Origin of leakage paths driven by electric fields in Al-doped TiO2 films

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 48 vom: 23. Dez., Seite 8225-30
1. Verfasser:	Park, Gyeong-Su (VerfasserIn)
Weitere Verfasser:	Park, Seong Yong, Heo, Sung, Kwon, Ohseong, Cho, Kyuho, Han, Kwan-Young, Kang, Sung Jin, Yoon, Aram, Kim, Miyoung
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2014
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article Al-doped TiO2 Ru-doped TiO2 bandgap reduction high-k leakage current Oxides titanium dioxide 15FIX9V2JP Ruthenium mehr... 7UI0TKC3U5 Aluminum CPD4NFA903 Titanium D1JT611TNE


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100	1		\|a Park, Gyeong-Su \|e verfasserin \|4 aut
245	1	0	\|a Origin of leakage paths driven by electric fields in Al-doped TiO2 films
264		1	\|c 2014
336			\|a Text \|b txt \|2 rdacontent
337			\|a ƒaComputermedien \|b c \|2 rdamedia
338			\|a ƒa Online-Ressource \|b cr \|2 rdacarrier
500			\|a Date Completed 16.07.2015
500			\|a Date Revised 30.09.2020
500			\|a published: Print-Electronic
500			\|a Citation Status MEDLINE
520			\|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a The growth of leakage current paths in Al-doped TiO2 (ATO) films is observed by in situ TEM under negative bias stress. Through systematic HAADF-STEM, STEM-EDS, and STEM-EELS studies, it is confirmed that the electric field-induced growth of the Ru-doped TiO2 phase is the main reason for the ATO film's negative leakage
650		4	\|a Journal Article
650		4	\|a Al-doped TiO2
650		4	\|a Ru-doped TiO2
650		4	\|a bandgap reduction
650		4	\|a high-k
650		4	\|a leakage current
650		7	\|a Oxides \|2 NLM
650		7	\|a titanium dioxide \|2 NLM
650		7	\|a 15FIX9V2JP \|2 NLM
650		7	\|a Ruthenium \|2 NLM
650		7	\|a 7UI0TKC3U5 \|2 NLM
650		7	\|a Aluminum \|2 NLM
650		7	\|a CPD4NFA903 \|2 NLM
650		7	\|a Titanium \|2 NLM
650		7	\|a D1JT611TNE \|2 NLM
700	1		\|a Park, Seong Yong \|e verfasserin \|4 aut
700	1		\|a Heo, Sung \|e verfasserin \|4 aut
700	1		\|a Kwon, Ohseong \|e verfasserin \|4 aut
700	1		\|a Cho, Kyuho \|e verfasserin \|4 aut
700	1		\|a Han, Kwan-Young \|e verfasserin \|4 aut
700	1		\|a Kang, Sung Jin \|e verfasserin \|4 aut
700	1		\|a Yoon, Aram \|e verfasserin \|4 aut
700	1		\|a Kim, Miyoung \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Advanced materials (Deerfield Beach, Fla.) \|d 1998 \|g 26(2014), 48 vom: 23. Dez., Seite 8225-30 \|w (DE-627)NLM098206397 \|x 1521-4095 \|7 nnns
773	1	8	\|g volume:26 \|g year:2014 \|g number:48 \|g day:23 \|g month:12 \|g pages:8225-30
856	4	0	\|u http://dx.doi.org/10.1002/adma.201403647 \|3 Volltext
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