Origin of leakage paths driven by electric fields in Al-doped TiO2 films

Origin of leakage paths driven by electric fields in Al-doped TiO2 films

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 48 vom: 23. Dez., Seite 8225-30
1. Verfasser: Park, Gyeong-Su (VerfasserIn)
Weitere Verfasser: Park, Seong Yong, Heo, Sung, Kwon, Ohseong, Cho, Kyuho, Han, Kwan-Young, Kang, Sung Jin, Yoon, Aram, Kim, Miyoung
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Al-doped TiO2 Ru-doped TiO2 bandgap reduction high-k leakage current Oxides titanium dioxide 15FIX9V2JP Ruthenium mehr... 7UI0TKC3U5 Aluminum CPD4NFA903 Titanium D1JT611TNE
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The growth of leakage current paths in Al-doped TiO2 (ATO) films is observed by in situ TEM under negative bias stress. Through systematic HAADF-STEM, STEM-EDS, and STEM-EELS studies, it is confirmed that the electric field-induced growth of the Ru-doped TiO2 phase is the main reason for the ATO film's negative leakage
Beschreibung:Date Completed 16.07.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201403647