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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201304096
|2 doi
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|a pubmed24n0777.xml
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|a (DE-627)NLM233081240
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|a (NLM)24277486
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Ghoshal, Tandra
|e verfasserin
|4 aut
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1 |
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|a Fabrication of ordered, large scale, horizontally-aligned si nanowire arrays based on an in situ hard mask block copolymer approach
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 03.12.2014
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a block copolymers
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|a nanowires
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|a patterning
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|a photoelectron spectroscopy
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4 |
|a silicon
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| 700 |
1 |
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|a Senthamaraikannan, Ramsankar
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shaw, Matthew T
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Holmes, Justin D
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Morris, Michael A
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 8 vom: 26. Feb., Seite 1207-16
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
8 |
|g volume:26
|g year:2014
|g number:8
|g day:26
|g month:02
|g pages:1207-16
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201304096
|3 Volltext
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|d 26
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|h 1207-16
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