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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201300550
|2 doi
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|a pubmed25n0761.xml
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|a eng
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|a Marzegalli, Anna
|e verfasserin
|4 aut
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|a Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 10.03.2014
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts
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|a Journal Article
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|a Ge
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|a dislocations
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|a heteroepitaxy
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|a patterning
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|a semiconductors
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|a Isa, Fabio
|e verfasserin
|4 aut
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|a Groiss, Heiko
|e verfasserin
|4 aut
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|a Müller, Elisabeth
|e verfasserin
|4 aut
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|a Falub, Claudiu V
|e verfasserin
|4 aut
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|a Taboada, Alfonso G
|e verfasserin
|4 aut
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|a Niedermann, Philippe
|e verfasserin
|4 aut
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|a Isella, Giovanni
|e verfasserin
|4 aut
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|a Schäffler, Friedrich
|e verfasserin
|4 aut
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|a Montalenti, Francesco
|e verfasserin
|4 aut
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|a von Känel, Hans
|e verfasserin
|4 aut
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|a Miglio, Leo
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 32 vom: 27. Aug., Seite 4408-12
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:25
|g year:2013
|g number:32
|g day:27
|g month:08
|g pages:4408-12
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|u http://dx.doi.org/10.1002/adma.201300550
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