Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning

Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 32 vom: 27. Aug., Seite 4408-12
1. Verfasser: Marzegalli, Anna (VerfasserIn)
Weitere Verfasser: Isa, Fabio, Groiss, Heiko, Müller, Elisabeth, Falub, Claudiu V, Taboada, Alfonso G, Niedermann, Philippe, Isella, Giovanni, Schäffler, Friedrich, Montalenti, Francesco, von Känel, Hans, Miglio, Leo
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Ge dislocations heteroepitaxy patterning semiconductors
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts
Beschreibung:Date Completed 10.03.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201300550