Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors

We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semicondu...

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Veröffentlicht in:	Langmuir : the ACS journal of surfaces and colloids. - 1985. - 29(2013), 23 vom: 11. Juni, Seite 7143-50
1. Verfasser:	Jang, Kwang-Suk (VerfasserIn)
Weitere Verfasser:	Wee, Duyoung, Kim, Yun Ho, Kim, Jinsoo, Ahn, Taek, Ka, Jae-Won, Yi, Mi Hye
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2013
Zugriff auf das übergeordnete Werk:	Langmuir : the ACS journal of surfaces and colloids
Schlagworte:	Journal Article Research Support, Non-U.S. Gov't Resins, Synthetic Solutions Water 059QF0KO0R polyimide resin 39355-34-5 Yttrium 58784XQC3Y mehr... Zinc Oxide SOI2LOH54Z yttria X8071685XT