Jang, K., Wee, D., Kim, Y. H., Kim, J., Ahn, T., Ka, J., & Yi, M. H. (2013). Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. Langmuir : the ACS journal of surfaces and colloids, 29(23), 7143. https://doi.org/10.1021/la401356u
Style de citation ChicagoJang, Kwang-Suk, Duyoung Wee, Yun Ho Kim, Jinsoo Kim, Taek Ahn, Jae-Won Ka, et Mi Hye Yi. "Surface Modification of a Polyimide Gate Insulator with an Yttrium Oxide Interlayer for Aqueous-solution-processed ZnO Thin-film Transistors." Langmuir : The ACS Journal of Surfaces and Colloids 29, no. 23 (2013): 7143. https://dx.doi.org/10.1021/la401356u.
Style de citation MLAJang, Kwang-Suk, et al. "Surface Modification of a Polyimide Gate Insulator with an Yttrium Oxide Interlayer for Aqueous-solution-processed ZnO Thin-film Transistors." Langmuir : The ACS Journal of Surfaces and Colloids, vol. 29, no. 23, 2013, p. 7143.