Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors
We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semicondu...
Ausführliche Beschreibung
Bibliographische Detailangaben
Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 29(2013), 23 vom: 11. Juni, Seite 7143-50
|
1. Verfasser: |
Jang, Kwang-Suk
(VerfasserIn) |
Weitere Verfasser: |
Wee, Duyoung,
Kim, Yun Ho,
Kim, Jinsoo,
Ahn, Taek,
Ka, Jae-Won,
Yi, Mi Hye |
Format: | Online-Aufsatz
|
Sprache: | English |
Veröffentlicht: |
2013
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Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
|
Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't
Resins, Synthetic
Solutions
Water
059QF0KO0R
polyimide resin
39355-34-5
Yttrium
58784XQC3Y
mehr...
Zinc Oxide
SOI2LOH54Z
yttria
X8071685XT |