Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors

We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semicondu...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 29(2013), 23 vom: 11. Juni, Seite 7143-50
1. Verfasser: Jang, Kwang-Suk (VerfasserIn)
Weitere Verfasser: Wee, Duyoung, Kim, Yun Ho, Kim, Jinsoo, Ahn, Taek, Ka, Jae-Won, Yi, Mi Hye
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Resins, Synthetic Solutions Water 059QF0KO0R polyimide resin 39355-34-5 Yttrium 58784XQC3Y mehr... Zinc Oxide SOI2LOH54Z yttria X8071685XT
LEADER 01000naa a22002652 4500
001 NLM227952014
003 DE-627
005 20231224074818.0
007 cr uuu---uuuuu
008 231224s2013 xx |||||o 00| ||eng c
024 7 |a 10.1021/la401356u  |2 doi 
028 5 2 |a pubmed24n0759.xml 
035 |a (DE-627)NLM227952014 
035 |a (NLM)23724823 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Jang, Kwang-Suk  |e verfasserin  |4 aut 
245 1 0 |a Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors 
264 1 |c 2013 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 10.01.2014 
500 |a Date Revised 25.11.2016 
500 |a published: Print-Electronic 
500 |a Citation Status MEDLINE 
520 |a We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semiconductor than is bare polyimde. The field-effect mobility and the on/off current ratio of the ZnO TFT with the YOx/polyimide gate insulator were 0.456 cm(2)/V·s and 2.12 × 10(6), respectively, whereas the ZnO TFT with the polyimide gate insulator was inactive 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 7 |a Resins, Synthetic  |2 NLM 
650 7 |a Solutions  |2 NLM 
650 7 |a Water  |2 NLM 
650 7 |a 059QF0KO0R  |2 NLM 
650 7 |a polyimide resin  |2 NLM 
650 7 |a 39355-34-5  |2 NLM 
650 7 |a Yttrium  |2 NLM 
650 7 |a 58784XQC3Y  |2 NLM 
650 7 |a Zinc Oxide  |2 NLM 
650 7 |a SOI2LOH54Z  |2 NLM 
650 7 |a yttria  |2 NLM 
650 7 |a X8071685XT  |2 NLM 
700 1 |a Wee, Duyoung  |e verfasserin  |4 aut 
700 1 |a Kim, Yun Ho  |e verfasserin  |4 aut 
700 1 |a Kim, Jinsoo  |e verfasserin  |4 aut 
700 1 |a Ahn, Taek  |e verfasserin  |4 aut 
700 1 |a Ka, Jae-Won  |e verfasserin  |4 aut 
700 1 |a Yi, Mi Hye  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir : the ACS journal of surfaces and colloids  |d 1992  |g 29(2013), 23 vom: 11. Juni, Seite 7143-50  |w (DE-627)NLM098181009  |x 1520-5827  |7 nnns 
773 1 8 |g volume:29  |g year:2013  |g number:23  |g day:11  |g month:06  |g pages:7143-50 
856 4 0 |u http://dx.doi.org/10.1021/la401356u  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_22 
912 |a GBV_ILN_350 
912 |a GBV_ILN_721 
951 |a AR 
952 |d 29  |j 2013  |e 23  |b 11  |c 06  |h 7143-50