High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure
This paper describes application of Sc-doped AlN (ScAlN) to wideband SAW devices in the 1 to 3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN film is combined with a base substrate with extremely...
| Publié dans: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 60(2013), 3 vom: 01. März, Seite 637-42 |
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| Auteur principal: | |
| Autres auteurs: | , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2013
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| Accès à la collection: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Sujets: | Journal Article Research Support, Non-U.S. Gov't |
| Résumé: | This paper describes application of Sc-doped AlN (ScAlN) to wideband SAW devices in the 1 to 3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN film is combined with a base substrate with extremely high acoustic wave velocities, such as diamond and SiC. Next, SAW delay lines are fabricated on the ScAlN/6H-SiC structure, and reasonable agreement between the theory and experiment is obtained. Finally, one-port SAW resonators are fabricated on the structure, and it is shown that high-performance is achievable in the 1 to 3 GHz range by use of the structure |
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| Description: | Date Completed 20.08.2013 Date Revised 11.03.2013 published: Print Citation Status PubMed-not-MEDLINE |
| ISSN: | 1525-8955 |
| DOI: | 10.1109/TUFFC.2013.2606 |