High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure
This paper describes application of Sc-doped AlN (ScAlN) to wideband SAW devices in the 1 to 3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN film is combined with a base substrate with extremely...
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Détails bibliographiques
| Publié dans: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 60(2013), 3 vom: 01. März, Seite 637-42
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| Auteur principal: |
Hashimoto, Ken-ya
(Auteur) |
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| Autres auteurs: |
Sato, Shuhei,
Teshigahara, Akihiko,
Nakamura, Takuya,
Kano, Kazuhiko |
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| Format: | Article en ligne
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| Langue: | English |
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| Publié: |
2013
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| Accès à la collection: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Sujets: | Journal Article
Research Support, Non-U.S. Gov't |
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