High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure
This paper describes application of Sc-doped AlN (ScAlN) to wideband SAW devices in the 1 to 3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN film is combined with a base substrate with extremely...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 60(2013), 3 vom: 01. März, Seite 637-42
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| 1. Verfasser: |
Hashimoto, Ken-ya
(VerfasserIn) |
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| Weitere Verfasser: |
Sato, Shuhei,
Teshigahara, Akihiko,
Nakamura, Takuya,
Kano, Kazuhiko |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2013
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't |
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