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231223s2005 xx ||||| 00| ||eng c |
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|a pubmed24n0523.xml
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|a (DE-627)NLM156774992
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|a (NLM)16042461
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Niinistö, Jaakko
|e verfasserin
|4 aut
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|a In situ quadrupole mass spectrometry study of atomic-layer deposition of ZrO2 using Cp2Zr(CH3)2 and water
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|c 2005
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Band
|b nc
|2 rdacarrier
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|a Date Completed 22.06.2006
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|a Date Revised 26.07.2005
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a Reactions during the atomic layer deposition (ALD) process of ZrO(2) from Cp(2)Zr(CH(3))(2) and deuterated water as precursors were studied with a quadrupole mass spectrometer (QMS) at 210-440 degrees C. The detected reaction byproducts were CpD (m/z = 67) and CH(3)D (m/z = 17). Almost all (90%) of the CH(3) ligands were released during the Cp(2)Zr(CH(3))(2) precursor pulse because of exchange reactions with the OD-terminated surface, and the rest, during the D(2)O pulse. About 40% of the CpD was released during the metal precursor pulse, and 60%, during the D(2)O pulse. ALD-type self-limiting growth was confirmed from 210 to 400 degrees C. However, below 300 degrees C the growth rate was low. Precursor decomposition affected the film growth mechanism at temperatures exceeding 400 degrees C
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|a Journal Article
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1 |
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|a Rahtu, Antti
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Putkonen, Matti
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ritala, Mikko
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Leskelä, Markku
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Niinistö, Lauri
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1999
|g 21(2005), 16 vom: 02. Aug., Seite 7321-5
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
1 |
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|g volume:21
|g year:2005
|g number:16
|g day:02
|g month:08
|g pages:7321-5
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| 912 |
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| 912 |
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| 912 |
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| 912 |
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|a GBV_ILN_721
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| 951 |
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|a AR
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| 952 |
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|d 21
|j 2005
|e 16
|b 02
|c 08
|h 7321-5
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