In situ reaction mechanism studies on the atomic layer deposition of Al2O3 from (CH3)2AlCl and water

Reaction mechanisms between dimethylaluminum chloride and deuterated water in the atomic layer deposition (ALD) of Al2O3 were studied at 150-400 degrees C using a quartz crystal microbalance (QCM) and a quadrupole mass spectrometer (QMS). The observed reaction byproducts were DCl and CH3D. QMS showe...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1999. - 21(2005), 8 vom: 12. Apr., Seite 3498-502
1. Verfasser: Matero, Raija (VerfasserIn)
Weitere Verfasser: Rahtu, Antti, Ritala, Mikko
Format: Aufsatz
Sprache:English
Veröffentlicht: 2005
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
LEADER 01000naa a22002652 4500
001 NLM154587710
003 DE-627
005 20231223070316.0
007 tu
008 231223s2005 xx ||||| 00| ||eng c
028 5 2 |a pubmed24n0515.xml 
035 |a (DE-627)NLM154587710 
035 |a (NLM)15807594 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Matero, Raija  |e verfasserin  |4 aut 
245 1 0 |a In situ reaction mechanism studies on the atomic layer deposition of Al2O3 from (CH3)2AlCl and water 
264 1 |c 2005 
336 |a Text  |b txt  |2 rdacontent 
337 |a ohne Hilfsmittel zu benutzen  |b n  |2 rdamedia 
338 |a Band  |b nc  |2 rdacarrier 
500 |a Date Completed 08.08.2006 
500 |a Date Revised 05.04.2005 
500 |a published: Print 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a Reaction mechanisms between dimethylaluminum chloride and deuterated water in the atomic layer deposition (ALD) of Al2O3 were studied at 150-400 degrees C using a quartz crystal microbalance (QCM) and a quadrupole mass spectrometer (QMS). The observed reaction byproducts were DCl and CH3D. QMS showed that about one-third of the chlorine, and half of the methyl ligands were released during the (CH3)2AlCl pulse. The growth rate deduced from the QMS and QCM data was in qualitative agreement with the previously published growth rate from ALD film growth experiments 
650 4 |a Journal Article 
700 1 |a Rahtu, Antti  |e verfasserin  |4 aut 
700 1 |a Ritala, Mikko  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir : the ACS journal of surfaces and colloids  |d 1999  |g 21(2005), 8 vom: 12. Apr., Seite 3498-502  |w (DE-627)NLM098181009  |x 1520-5827  |7 nnns 
773 1 8 |g volume:21  |g year:2005  |g number:8  |g day:12  |g month:04  |g pages:3498-502 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_22 
912 |a GBV_ILN_350 
912 |a GBV_ILN_721 
951 |a AR 
952 |d 21  |j 2005  |e 8  |b 12  |c 04  |h 3498-502