In situ reaction mechanism studies on the atomic layer deposition of Al2O3 from (CH3)2AlCl and water

Reaction mechanisms between dimethylaluminum chloride and deuterated water in the atomic layer deposition (ALD) of Al2O3 were studied at 150-400 degrees C using a quartz crystal microbalance (QCM) and a quadrupole mass spectrometer (QMS). The observed reaction byproducts were DCl and CH3D. QMS showe...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1999. - 21(2005), 8 vom: 12. Apr., Seite 3498-502
1. Verfasser: Matero, Raija (VerfasserIn)
Weitere Verfasser: Rahtu, Antti, Ritala, Mikko
Format: Aufsatz
Sprache:English
Veröffentlicht: 2005
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:Reaction mechanisms between dimethylaluminum chloride and deuterated water in the atomic layer deposition (ALD) of Al2O3 were studied at 150-400 degrees C using a quartz crystal microbalance (QCM) and a quadrupole mass spectrometer (QMS). The observed reaction byproducts were DCl and CH3D. QMS showed that about one-third of the chlorine, and half of the methyl ligands were released during the (CH3)2AlCl pulse. The growth rate deduced from the QMS and QCM data was in qualitative agreement with the previously published growth rate from ALD film growth experiments
Beschreibung:Date Completed 08.08.2006
Date Revised 05.04.2005
published: Print
Citation Status PubMed-not-MEDLINE
ISSN:1520-5827