Effect of diamond nucleation process on propagation losses of AlN/diamond SAW filter
In this work, the effect of a diamond nucleation process on freestanding aluminium nitride (AlN)/diamond surface acoustic wave (SAW) device performances was studied. Before diamond deposition, silicon (Si) substrates have been mechanically nucleated, using an ultrasonic vibration table with submicro...
Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1999. - 51(2004), 12 vom: 03. Dez., Seite 1704-9 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , |
Format: | Aufsatz |
Sprache: | English |
Veröffentlicht: |
2004
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Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
Schlagworte: | Journal Article |
Zusammenfassung: | In this work, the effect of a diamond nucleation process on freestanding aluminium nitride (AlN)/diamond surface acoustic wave (SAW) device performances was studied. Before diamond deposition, silicon (Si) substrates have been mechanically nucleated, using an ultrasonic vibration table with submicron diamond slurry, and bias-enhanced nucleated (BEN). Freestanding diamond layers obtained on mechanically scratched Si substrates exhibit a surface roughness of R(MS) = 13 nm, whereas very low surface roughness (as low as R(MS) < or = 1 nm) can be achieved on a freestanding BEN diamond layer. Propagation losses have been measured as a function of the operating frequency for the two nucleation techniques. Dispersion curves of phase velocities and electromechanical coupling coefficient (K2) were determined experimentally and by calculation as a function of normalized thickness AlN film (kh(AlN) = 2pi h(AlN)/lambda). Experimental results show that the propagation losses strongly depend on the nucleation technique, and that these losses are weakly increased with frequency when the BEN technique is used |
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Beschreibung: | Date Completed 10.03.2005 Date Revised 17.09.2019 published: Print Citation Status PubMed-not-MEDLINE |
ISSN: | 0885-3010 |