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241222s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202413178
|2 doi
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|a pubmed24n1639.xml
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|a (DE-627)NLM381936457
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|a (NLM)39707639
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Jeon, Yu-Rim
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Enhanced Synaptic Memory Window and Linearity in Planar In2Se3 Ferroelectric Junctions
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 21.12.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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| 520 |
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|a © 2024 Wiley‐VCH GmbH.
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|a A synaptic memristor using 2D ferroelectric junctions is a promising candidate for future neuromorphic computing with ultra-low power consumption, parallel computing, and adaptive scalable computing technologies. However, its utilization is restricted due to the limited operational voltage memory window and low on/off current (ION/OFF) ratio of the memristor devices. Here, it is demonstrated that synaptic operations of 2D In2Se3 ferroelectric junctions in a planar memristor architecture can reach a voltage memory window as high as 16 V (±8 V) and ION/OFF ratio of 108, significantly higher than the current literature values. The power consumption is 10-5 W at the on state, demonstrating low power usage while maintaining a large ION/OFF ratio of 108 compared to other ferroelectric devices. Moreover, the developed ferroelectric junction mimicked synaptic plasticity through pulses in the pre-synapse. The nonlinearity factors are obtained 1.25 for LTP, -0.25 for LTD, respectively. The single-layer perceptron (SLP) and convolutional neural network (CNN) on-chip training results in an accuracy of up to 90%, compared to the 91% in an ideal synapse device. Furthermore, the incorporation of a 3 nm thick SiO2 interface between the α-In2Se3 and the Au electrode resulted in ultrahigh performance among other 2D ferroelectric junction devices to date
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|a Journal Article
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4 |
|a 2D vdW material
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4 |
|a CNN
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| 650 |
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4 |
|a MNIST
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|a ferroelectric tunneling junction
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|a neuromorphic computing system
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|a synaptic device
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| 650 |
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4 |
|a α‐In2Se3
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| 700 |
1 |
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|a Kim, Dongyoon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Biswas, Chandan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ignacio, Nicholas D
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Carmichael, Patrick
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Feng, Shaopeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lai, Keji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Dong-Hwan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Akinwande, Deji
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 20. Dez., Seite e2413178
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g year:2024
|g day:20
|g month:12
|g pages:e2413178
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|u http://dx.doi.org/10.1002/adma.202413178
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|j 2024
|b 20
|c 12
|h e2413178
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