Enhanced Synaptic Memory Window and Linearity in Planar In2Se3 Ferroelectric Junctions
© 2024 Wiley‐VCH GmbH.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 20. Dez., Seite e2413178 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2024
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article 2D vdW material CNN MNIST ferroelectric tunneling junction neuromorphic computing system synaptic device α‐In2Se3 |
| Zusammenfassung: | © 2024 Wiley‐VCH GmbH. A synaptic memristor using 2D ferroelectric junctions is a promising candidate for future neuromorphic computing with ultra-low power consumption, parallel computing, and adaptive scalable computing technologies. However, its utilization is restricted due to the limited operational voltage memory window and low on/off current (ION/OFF) ratio of the memristor devices. Here, it is demonstrated that synaptic operations of 2D In2Se3 ferroelectric junctions in a planar memristor architecture can reach a voltage memory window as high as 16 V (±8 V) and ION/OFF ratio of 108, significantly higher than the current literature values. The power consumption is 10-5 W at the on state, demonstrating low power usage while maintaining a large ION/OFF ratio of 108 compared to other ferroelectric devices. Moreover, the developed ferroelectric junction mimicked synaptic plasticity through pulses in the pre-synapse. The nonlinearity factors are obtained 1.25 for LTP, -0.25 for LTD, respectively. The single-layer perceptron (SLP) and convolutional neural network (CNN) on-chip training results in an accuracy of up to 90%, compared to the 91% in an ideal synapse device. Furthermore, the incorporation of a 3 nm thick SiO2 interface between the α-In2Se3 and the Au electrode resulted in ultrahigh performance among other 2D ferroelectric junction devices to date |
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| Beschreibung: | Date Revised 21.12.2024 published: Print-Electronic Citation Status Publisher |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202413178 |