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241031s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202411393
|2 doi
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|a pubmed24n1644.xml
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|a (DE-627)NLM379599198
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|a (NLM)39473298
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Hao, Duxing
|e verfasserin
|4 aut
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|a Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 28.12.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real-space structural transformation. Here, magnetic field (B)-induced giant electric hysteretic responses to back-gate voltages are reported in ML-MoS2 field-effect transistors (FETs) on SiO2/Si at temperatures < 20 K. The observed hysteresis increases with |B| up to 12 T and is tunable by varying the temperature. Raman spectroscopic and scanning tunneling microscopic studies reveal significant lattice expansion with increasing |B| at 4.2 K, and this lattice expansion becomes asymmetric in ML-MoS2 FETs on rigid SiO2/Si substrates, leading to out-of-plane mirror symmetry breaking and the emergence of a tunable out-of-plane ferroelectric-like polar order. This broken symmetry-induced polarization in ML-MoS2 shows typical ferroelectric butterfly hysteresis in piezo-response force microscopy, adding ML-MoS2 to the single-layer material family that exhibits out-of-plane polar order-induced ferroelectricity, which is promising for such technological applications as cryo-temperature ultracompact non-volatile memories, memtransistors, and ultrasensitive magnetic field sensors. Moreover, the polar effect induced by asymmetric lattice expansion may be further generalized to other ML-TMDs and achieved by nanoscale strain engineering of the substrate without magnetic fields
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|a Journal Article
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|a MoS2
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|a field‐effect transistor
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|a hysteresis
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|a lattice expansion
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|a polar order
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|a Chang, Wen-Hao
|e verfasserin
|4 aut
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|a Chang, Yu-Chen
|e verfasserin
|4 aut
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|a Liu, Wei-Tung
|e verfasserin
|4 aut
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|a Ho, Sheng-Zhu
|e verfasserin
|4 aut
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|a Lu, Chen-Hsuan
|e verfasserin
|4 aut
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|a Yang, Tilo H
|e verfasserin
|4 aut
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|a Kawakami, Naoya
|e verfasserin
|4 aut
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|a Chen, Yi-Chun
|e verfasserin
|4 aut
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1 |
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|a Liu, Ming-Hao
|e verfasserin
|4 aut
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1 |
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|a Lin, Chun-Liang
|e verfasserin
|4 aut
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1 |
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|a Lu, Ting-Hua
|e verfasserin
|4 aut
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|a Lan, Yann-Wen
|e verfasserin
|4 aut
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|a Yeh, Nai-Chang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 52 vom: 01. Dez., Seite e2411393
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:52
|g day:01
|g month:12
|g pages:e2411393
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|u http://dx.doi.org/10.1002/adma.202411393
|3 Volltext
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