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241018s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202412210
|2 doi
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|a pubmed25n1262.xml
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|a (DE-627)NLM379075148
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|a (NLM)39420657
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Zhang, Yuxuan
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Molecular Reconfiguration of Disordered Tellurium Oxide Transistors with Biomimetic Spectral Selectivity
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 05.12.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Reconfigurable devices with field-effect transistor features and neuromorphic behaviors are promising for enhancing data processing capability and reducing power consumption in next-generation semiconductor platforms. However, commonly used 2D materials for reconfigurable devices require additional modulation terminals and suffer from complex and stringent operating rules to obtain specific functionalities. Here, a p-type disordered tellurium oxide is introduced that realizes dual-mode reconfigurability as a logic transistor and a neuromorphic device. Due to the disordered film surface, the enhanced adsorption of oxygen molecules and laser-induced desorption concurrently regulate the carrier concentration in the channel. The device exhibits high-performance p-type characteristics with a field-effect hole mobility of 10.02 cm2 V-1 s-1 and an Ion/Ioff ratio exceeding 106 in the transistor mode. As a neuromorphic device, the vision system exhibits biomimetic bee vision, explicitly responding to the blue-to-ultraviolet light. Finally, in-sensor denoising and invisible image recognition in static and dynamic scenarios are achieved
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|a Journal Article
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|a amorphous oxide semiconductor
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|a logic gate
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|a neuromorphic vision device
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|a p‐type transistor
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|a reconfigurable device
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1 |
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|a Wang, Jingwen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xie, Pengshan
|e verfasserin
|4 aut
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1 |
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|a Meng, You
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shao, He
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jin, ChenXing
|e verfasserin
|4 aut
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1 |
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|a Gao, Boxiang
|e verfasserin
|4 aut
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1 |
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|a Shen, Yi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Quan, Quan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yezhan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Weijun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Dengji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Zenghui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Bowen
|e verfasserin
|4 aut
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1 |
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|a Yip, SenPo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Jia
|e verfasserin
|4 aut
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| 700 |
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|a Ho, Johnny C
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 49 vom: 30. Dez., Seite e2412210
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
8 |
|g volume:36
|g year:2024
|g number:49
|g day:30
|g month:12
|g pages:e2412210
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202412210
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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|a GBV_NLM
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|a GBV_ILN_350
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|a AR
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|d 36
|j 2024
|e 49
|b 30
|c 12
|h e2412210
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