Electrostatic Gating-Dependent Multiple Band Alignments in Ferroelectric α-In2Se3/α-Te van der Waals Heterostructures

The two-dimensional ferroelectric van der Waals (vdW) heterojunction has been recognized as one of the most promising combinations for emerging ferroelectric memory materials due to its noncovalent bonding and flexible stacking of various materials. In this work, the first-principles calculations we...

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Publié dans:	Langmuir : the ACS journal of surfaces and colloids. - 1985. - 40(2024), 41 vom: 15. Okt., Seite 21453-21459
Auteur principal:	Ding, Cheng (Auteur)
Autres auteurs:	Zhu, Yun-Lai, Qu, Zihan, Dai, Yuehua
Format:	Article en ligne
Langue:	English
Publié:	2024
Accès à la collection:	Langmuir : the ACS journal of surfaces and colloids
Sujets:	Journal Article