Ding, C., Zhu, Y., Qu, Z., & Dai, Y. (2024). Electrostatic Gating-Dependent Multiple Band Alignments in Ferroelectric α-In2Se3/α-Te van der Waals Heterostructures. Langmuir : the ACS journal of surfaces and colloids, 40(41), 21453. https://doi.org/10.1021/acs.langmuir.4c02225
Style de citation ChicagoDing, Cheng, Yun-Lai Zhu, Zihan Qu, et Yuehua Dai. "Electrostatic Gating-Dependent Multiple Band Alignments in Ferroelectric α-In2Se3/α-Te Van Der Waals Heterostructures." Langmuir : The ACS Journal of Surfaces and Colloids 40, no. 41 (2024): 21453. https://dx.doi.org/10.1021/acs.langmuir.4c02225.
Style de citation MLADing, Cheng, et al. "Electrostatic Gating-Dependent Multiple Band Alignments in Ferroelectric α-In2Se3/α-Te Van Der Waals Heterostructures." Langmuir : The ACS Journal of Surfaces and Colloids, vol. 40, no. 41, 2024, p. 21453.