Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 33 vom: 27. Aug., Seite e2403743
1. Verfasser: Zhu, Maguang (VerfasserIn)
Weitere Verfasser: Yin, Huimin, Cao, Jiang, Xu, Lin, Lu, Peng, Liu, Yang, Ding, Li, Fan, Chenwei, Liu, Haiyang, Zhang, Yuanfang, Jin, Yizheng, Peng, Lian-Mao, Jin, Chuanhong, Zhang, Zhiyong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 1D coaxial heterojunction carbon nanotube inner doping perovskite quasi‐broken‐gap (BG) tunnel field‐effect transistor
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520 |a Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field-effect transistors, but the perfect sp2 C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor for constructing complementary metal-oxide-semiconductor electronics. Most importantly, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) is first demonstrated based on an individual partial-filling CsPbBr3/CNT and exhibits a subthreshold swing of 35 mV dec-1 with a high on-state current of up to 4.9 µA per tube and an on/off current ratio of up to 105 at room temperature. The quasi-BG TFET based on the CsPbBr3/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption integrated circuits 
650 4 |a Journal Article 
650 4 |a 1D coaxial heterojunction 
650 4 |a carbon nanotube 
650 4 |a inner doping 
650 4 |a perovskite 
650 4 |a quasi‐broken‐gap (BG) 
650 4 |a tunnel field‐effect transistor 
700 1 |a Yin, Huimin  |e verfasserin  |4 aut 
700 1 |a Cao, Jiang  |e verfasserin  |4 aut 
700 1 |a Xu, Lin  |e verfasserin  |4 aut 
700 1 |a Lu, Peng  |e verfasserin  |4 aut 
700 1 |a Liu, Yang  |e verfasserin  |4 aut 
700 1 |a Ding, Li  |e verfasserin  |4 aut 
700 1 |a Fan, Chenwei  |e verfasserin  |4 aut 
700 1 |a Liu, Haiyang  |e verfasserin  |4 aut 
700 1 |a Zhang, Yuanfang  |e verfasserin  |4 aut 
700 1 |a Jin, Yizheng  |e verfasserin  |4 aut 
700 1 |a Peng, Lian-Mao  |e verfasserin  |4 aut 
700 1 |a Jin, Chuanhong  |e verfasserin  |4 aut 
700 1 |a Zhang, Zhiyong  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 33 vom: 27. Aug., Seite e2403743  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:36  |g year:2024  |g number:33  |g day:27  |g month:08  |g pages:e2403743 
856 4 0 |u http://dx.doi.org/10.1002/adma.202403743  |3 Volltext 
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