Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 33 vom: 27. Aug., Seite e2403743
1. Verfasser:	Zhu, Maguang (VerfasserIn)
Weitere Verfasser:	Yin, Huimin, Cao, Jiang, Xu, Lin, Lu, Peng, Liu, Yang, Ding, Li, Fan, Chenwei, Liu, Haiyang, Zhang, Yuanfang, Jin, Yizheng, Peng, Lian-Mao, Jin, Chuanhong, Zhang, Zhiyong
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2024
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article 1D coaxial heterojunction carbon nanotube inner doping perovskite quasi‐broken‐gap (BG) tunnel field‐effect transistor

Beschreibung
Zusammenfassung:	© 2024 Wiley‐VCH GmbH. Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field-effect transistors, but the perfect sp2 C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor for constructing complementary metal-oxide-semiconductor electronics. Most importantly, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) is first demonstrated based on an individual partial-filling CsPbBr3/CNT and exhibits a subthreshold swing of 35 mV dec-1 with a high on-state current of up to 4.9 µA per tube and an on/off current ratio of up to 105 at room temperature. The quasi-BG TFET based on the CsPbBr3/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption integrated circuits
Beschreibung:	Date Revised 15.08.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202403743