Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 24 vom: 01. Juni, Seite e2312008
Auteur principal: Shi, Jiacheng (Auteur)
Autres auteurs: Arpaci, Sevdenur, Lopez-Dominguez, Victor, Sangwan, Vinod K, Mahfouzi, Farzad, Kim, Jinwoong, Athas, Jordan G, Hamdi, Mohammad, Aygen, Can, Arava, Hanu, Phatak, Charudatta, Carpentieri, Mario, Jiang, Jidong S, Grayson, Matthew A, Kioussis, Nicholas, Finocchio, Giovanni, Hersam, Mark C, Khalili Amiri, Pedram
Format: Article en ligne
Langue:English
Publié: 2024
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article antiferromagnets magnetic random‐access memory magnetic tunnel junctions spin–orbit torques tunneling magnetoresistance